RELATION BETWEEN POTENTIAL BARRIER SHAPE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF MIS STRUCTURES

被引：2
作者：
SHOUSHA, AHM [1 ]
机构：
[1] CAIRO UNIV, ELECTR & ELECT COMMUN DEPT, CAIRO, UNITED ARAB REP
来源：
SOLID STATE COMMUNICATIONS | 1976年 / 18卷 / 03期
关键词：
D O I：
10.1016/0038-1098(76)90017-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：339 / 341
页数：3
相关论文
共 50 条
[41]   CAPACITANCE-VOLTAGE CHARACTERISTICS OF MICROWAVE SCHOTTKY DIODES [J].
GELMONT, B ;
SHUR, M ;
MATTAUCH, RJ .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1991, 39 (05) :857-863
[42]   Capacitance-voltage characteristics of polycrystalline materials and junctions [J].
Banerjee, S. ;
Saha, H. .
Indian Journal of Pure and Applied Physics, 1988, 26 (09) :561-569
[43]   INFLUENCE OF A BUILT-IN CHARGE IN AN ISOTYPIC HETEROJUNCTION ON THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF A BARRIER STRUCTURE [J].
BYCHKOVSKII, DN ;
KONSTANTINOV, OV .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (05) :519-522
[44]   Effect of temperature on capacitance-voltage characteristics of SOI [J].
Jayatissa, AH ;
Li, ZY .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 124 :331-334
[45]   Capacitance-voltage characteristics of ZnO/GaN heterostructures [J].
Oh, DC ;
Suzuki, T ;
Kim, JJ ;
Makino, H ;
Hanada, T ;
Yao, T ;
Ko, HJ .
APPLIED PHYSICS LETTERS, 2005, 87 (16) :1-3
[46]   CURRENT-VOLTAGE AND CAPACITANCE-VOLTAGE CHARACTERISTICS OF REAL HETEROJUNCTIONS [J].
SHIK, AY .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (09) :1028-1034
[47]   Specific Features of the Capacitance-Voltage Characteristics of a Cu-SiO2-p-InSb MIS Structure [J].
Aliev, R. A. ;
Gajiev, G. M. ;
Gadzhialiev, M. M. ;
Ismailov, A. M. ;
Pirmagomedov, Z. Sh. .
SEMICONDUCTORS, 2017, 51 (03) :367-369
[48]   Energy band shape of monolayer metal/organic/metal structures as determined by the capacitance-voltage method [J].
Cvikl, B ;
Kozelj, M ;
Korosak, D ;
Jecl, R .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (02)
[49]   Discrete steps in the capacitance-voltage characteristics of GaInN/GaN light emitting diode structures [J].
Xia, Y ;
Williams, E ;
Park, Y ;
Yilmaz, I ;
Shah, JM ;
Schubert, EF ;
Wetzel, C .
GAN, AIN, INN AND THEIR ALLOYS, 2005, 831 :233-238
[50]   Laterally Inhomogeneous Barrier Analysis Using Capacitance-Voltage Characteristics of Identically Fabricated Schottky Diodes [J].
Cavdar, Sukru ;
Tugluoglu, Nihat ;
Akgul, Kubra Bengin ;
Koralay, Haluk .
JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (08) :3908-3913
12345