TRANSIENT-CAPACITANCE MEASUREMENT OF THE GRAIN-BOUNDARY LEVELS IN SEMICONDUCTORS

被引：28

作者：

BRONIATOWSKI, A ^{[1
]}

BOURGOIN, JC ^{[1
]}

机构：

[1] UNIV PARIS 07,ECOLE NORM SUPER,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1982年 / 48卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.48.424

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：424 / 427

页数：4

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