UNIFORM ARRAYS OF RESONANT-CAVITY ENHANCED INGAAS-ALGAAS HETEROJUNCTION PHOTOTRANSISTORS

被引：6
|
作者：
SJOLUND, O
LARSSON, A
机构：
[1] Department of Optoelectronics and Electrical Measurements, Chalmers University of Technology
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 06期
基金：
瑞典研究理事会;
关键词：
D O I：
10.1109/68.388764
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present uniformity data on arrays of resonant cavity enhanced InGaAs-AlGaAs phototransistors responding to wavelengths for which the GaAs substrate is transparent The arrays consist of 7x7 transistors. The uniformity in resonant wavelength and maximum responsivity was found to be good within individual arrays, The standard deviation of the resonant wavelength was significantly smaller than the resonance full width at half maximum of 8 nm, However, large variations were observed between arrays. This shows the need for a resonant transistor design that can be post-growth tuned to the desired resonance wavelength without affecting the maximum responsivity.
引用
收藏
页码：682 / 684
页数：3
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