21-W BROAD AREA NEAR-DIFFRACTION-LIMITED SEMICONDUCTOR AMPLIFIER

被引:29
作者
GOLDBERG, L [1 ]
MEHUYS, D [1 ]
机构
[1] SPECTRA DIODE LABS,SAN JOSE,CA 95134
关键词
D O I
10.1063/1.107830
中图分类号
O59 [应用物理学];
学科分类号
摘要
A 600-mu-m wide broad area single pass GaAlAs traveling wave amplifier emitted 21 W in pulsed operation. The far-field was dominated by a near-diffraction limited 0.08-degrees wide lobe, with 16 W measured in a 0.9-degrees angular aperture. Current dependent scattering of the output beam power to outside of the diffraction-limited lobe was observed.
引用
收藏
页码:633 / 635
页数:3
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