621-NM CW OPERATION (O-DEGREE-C) OF ALGAINP VISIBLE SEMICONDUCTOR-LASERS

被引：15
作者：
KAWATA, S
KOBAYASHI, K
GOMYO, A
HINO, I
SUZUKI, T
机构：
来源：
ELECTRONICS LETTERS | 1986年 / 22卷 / 23期
关键词：
D O I：
10.1049/el:19860866
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：1265 / 1266
页数：2
相关论文
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[1]   STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE [J].
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[3]   ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
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APPLIED PHYSICS LETTERS, 1986, 48 (03) :207-208
[4]   661.7 NM ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE LASERS WITH ALUMINUM-CONTAINING QUATERNARY ACTIVE LAYER [J].
KOBAYASHI, K ;
KAWATA, S ;
GOMYO, A ;
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SUZUKI, T .
ELECTRONICS LETTERS, 1985, 21 (24) :1162-1163
[5]   ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE VISIBLE LASERS [J].
KOBAYASHI, K ;
KAWATA, S ;
GOMYO, A ;
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SUZUKI, T .
ELECTRONICS LETTERS, 1985, 21 (20) :931-932
[6]  
SUZUKI T, 1986, 18TH INT C SOL STAT, P149
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