CRYSTAL-GROWTH OF COMPLETELY DISLOCATION-FREE AND STRIATION-FREE GAAS

被引:50
作者
KOHDA, H
YAMADA, K
NAKANISHI, H
KOBAYASHI, T
OSAKA, J
HOSHIKAWA, K
机构
关键词
D O I
10.1016/0022-0248(85)90399-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:813 / 816
页数:4
相关论文
共 10 条
[1]   ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].
ABRAHAMS, MS ;
BUIOCCHI, CJ .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&
[2]   DISLOCATION ETCH PITS IN SINGLE CRYSTAL GAAS [J].
GRABMAIER, JG ;
WATSON, CB .
PHYSICA STATUS SOLIDI, 1969, 32 (01) :K13-+
[3]   HOMOGENEOUS DOPANT DISTRIBUTION OF SILICON CRYSTAL GROWN BY VERTICAL MAGNETIC FIELD-APPLIED CZOCHRALSKI METHOD [J].
HOSHIKAWA, K ;
KOHDA, H ;
HIRATA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (01) :L37-L39
[4]   CZOCHRALSKI SILICON CRYSTAL-GROWTH IN THE VERTICAL MAGNETIC-FIELD [J].
HOSHIKAWA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09) :L545-L547
[5]  
HYUGA F, COMMUNICATION
[6]   DISLOCATION-FREE GAAS AND INP CRYSTALS BY ISOELECTRONIC DOPING [J].
JACOB, G ;
DUSEAUX, M ;
FARGES, JP ;
VANDENBOOM, MMB ;
ROKSNOER, PJ .
JOURNAL OF CRYSTAL GROWTH, 1983, 61 (02) :417-424
[7]   A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS [J].
JORDAN, AS ;
CARUSO, R ;
VONNEIDA, AR .
BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04) :593-637
[8]   DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR [J].
MIYAZAWA, S ;
ISHII, Y ;
ISHIDA, S ;
NANISHI, Y .
APPLIED PHYSICS LETTERS, 1983, 43 (09) :853-855
[9]  
NAKANISHI H, 1984, 16TH 1984 INT C SOL, P63
[10]   HOMOGENEITY OF VERTICAL MAGNETIC-FIELD APPLIED LEC GAAS CRYSTAL [J].
OSAKA, J ;
KOHDA, H ;
KOBAYASHI, T ;
HOSHIKAWA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (04) :L195-L197