AN OVERVIEW OF RADIATION-INDUCED INTERFACE TRAPS IN MOS STRUCTURES

被引：109
作者：
OLDHAM, TR
MCLEAN, FB
BOESCH, HE
MCGARRITY, JM
机构：
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1989年 / 4卷 / 12期
关键词：
D O I：
10.1088/0268-1242/4/12/004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：986 / 999
页数：14
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