ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION

被引：95

作者：

BROWN, GA

ROBINETT.WC

CARLSON, HG

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1968年 / 115卷 / 09期

关键词：

D O I：

10.1149/1.2411484

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：948 / &

共 35 条

[1] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM [J].

BEAN, KE ;

GLEIM, PS ;

YEAKLEY, RL ;

RUNYAN, WR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :733-&

[2]

BEAN KE, 1966, OCT PHIL M EL SOC

[3]

BROWN GA, 1966, J ELECTROCHEM SOC, V113, pC315

[4] The red barrier of the internal photo effect and debonding work of the half ladder [J].

De Boer, JH ;

Van Geel, WC .

PHYSICA, 1935, 2 :286-298

[5]

Debye P., 1929, POLAR MOL, P77

[6] PROPERTY CHANGES IN PYROLYTIC SILICON NITRIDE WITH REACTANT COMPOSITION CHANGES [J].

DOO, VY ;

KERR, DR ;

NICHOLS, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) :61-&

[7] PREPARATION AND PROPERTIES OF PYROLYTIC SILICON NITRIDE [J].

DOO, VY ;

NICHOLS, DR ;

SILVEY, GA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) :1279-&

[8]

DOO VY, 1966, OCT PHIL M EL SOC

[9]

Frenkel J, 1938, PHYS REV, V54, P647, DOI 10.1103/PhysRev.54.647

[10]

Frohlich H., 1958, THEORY DIELECTRICS

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