HIGH-PURITY GAAS GROWN BY THE HYDRIDE VPE PROCESS

[11] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &

[12] VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GAAS WITH THE ASCL3-GA-N2 SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 344 - 349

[13] PHOTOTHERMAL IONIZATION IDENTIFICATION OF SULFUR DONORS IN GAAS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 183 - 185

[14] LOW TS, 1982, APPL PHYS LETT, V40

[15] LOW TS, 1982, OISO DONF SER, V63, P143

[16] RESIDUAL DONORS IN HIGH-PURITY GALLIUM-ARSENIDE EPITAXIALLY GROWN FROM VAPOR-PHASE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) : 1617 - 1622

[17] DOPING BEHAVIOR OF SILICON IN VAPOR-GROWN III-V EPITAXIAL-FILMS [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 183 - 189

[18] SKROMME BJ, 1982, JUN EL MAT C FORT CO

[19] STILLMAN GE, 1977, SEMICONDUCT SEMIMET, V12, P169

[20] TIETJEN JJ, 1971, J VACUUM SCI TECH, V8, P55

[11] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &

[12] VAPOR-PHASE EPITAXIAL-GROWTH OF HIGH-PURITY GAAS WITH THE ASCL3-GA-N2 SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 344 - 349

[13] PHOTOTHERMAL IONIZATION IDENTIFICATION OF SULFUR DONORS IN GAAS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 183 - 185

[14] LOW TS, 1982, APPL PHYS LETT, V40

[15] LOW TS, 1982, OISO DONF SER, V63, P143

[16] RESIDUAL DONORS IN HIGH-PURITY GALLIUM-ARSENIDE EPITAXIALLY GROWN FROM VAPOR-PHASE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) : 1617 - 1622

[17] DOPING BEHAVIOR OF SILICON IN VAPOR-GROWN III-V EPITAXIAL-FILMS [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 183 - 189

[18] SKROMME BJ, 1982, JUN EL MAT C FORT CO

[19] STILLMAN GE, 1977, SEMICONDUCT SEMIMET, V12, P169

[20] TIETJEN JJ, 1971, J VACUUM SCI TECH, V8, P55