HIGH-PURITY GAAS GROWN BY THE HYDRIDE VPE PROCESS

被引：12

作者：

ABROKWAH, JK

PECK, TN

WALTERSON, RA

STILLMAN, GE

LOW, TS

SKROMME, B

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 04期

关键词：

D O I：

10.1007/BF02676796

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：681 / 699

页数：19

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