ELECTRICAL AND PHOTO-LUMINESCENCE PROPERTIES OF ZNSE THIN-FILMS GROWN BY MOLECULAR-BEAM EPITAXY - SUBSTRATE-TEMPERATURE EFFECT

被引：73
作者：
YAO, T
OGURA, M
MATSUOKA, S
MORISHITA, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 03期
关键词：
D O I：
10.1143/JJAP.22.L144
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：L144 / L146
页数：3
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共 13 条
[1]   DONOR-ACCEPTOR PAIR BANDS IN ZNSE [J].
BHARGAVA, RN ;
SEYMOUR, RJ ;
FITZPATRICK, BJ ;
HERKO, SP .
PHYSICAL REVIEW B, 1979, 20 (06) :2407-2419
[2]   THE ROLE OF IMPURITIES IN REFINED ZNSE AND OTHER II-VI-SEMICONDUCTORS [J].
BHARGAVA, RN .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :15-26
[3]   PAIR SPECTRA AND EDGE EMISSION IN ZINC SELENIDE [J].
DEAN, PJ ;
MERZ, JL .
PHYSICAL REVIEW, 1969, 178 (03) :1310-&
[4]  
DEAN PJ, 1979, I PHYS C SER, V46, P100
[5]   SHALLOW ACCEPTORS AND P-TYPE ZNSE [J].
KOSAI, K ;
FITZPATRICK, BJ ;
GRIMMEISS, HG ;
BHARGAVA, RN ;
NEUMARK, GF .
APPLIED PHYSICS LETTERS, 1979, 35 (02) :194-196
[6]   OPTICALLY DETECTED MAGNETIC-RESONANCE OF THE ZINC VACANCY IN ZNSE [J].
LEE, KM ;
DANG, LS ;
WATKINS, GD .
SOLID STATE COMMUNICATIONS, 1980, 35 (07) :527-530
[7]   OPTICAL PROPERTIES OF SUBSTITUTIONAL DONORS IN ZNSE [J].
MERZ, JL ;
SHIEVER, JW ;
NASSAU, K ;
KUKIMOTO, H .
PHYSICAL REVIEW B, 1972, 6 (02) :545-&
[8]   THE ELECTRICAL-PROPERTIES AND IMPURITY PROFILES OF ZNSE FILMS ON GAAS AND OF GALLIUM-DIFFUSED ZNSE SINGLE-CRYSTALS [J].
MURANOI, T ;
FURUKOSHI, M .
THIN SOLID FILMS, 1981, 86 (04) :307-315
[9]   NEAR-BAND-EDGE PHOTO-LUMINESCENCE IN ZNSE GROWN FROM INDIUM SOLUTION [J].
SHIRAKAWA, Y ;
KUKIMOTO, H .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2014-2019
[10]   MOLECULAR-BEAM EPITAXY OF ZINC CHALCOGENIDES [J].
YAO, T ;
MAEKAWA, S .
JOURNAL OF CRYSTAL GROWTH, 1981, 53 (02) :423-431
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