APPLICATION OF THERMAL PULSE ANNEALING TO ION-IMPLANTED GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：30
作者：
ASBECK, PM
MILLER, DL
BABCOCK, EJ
KIRKPATRICK, CG
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 04期
关键词：
D O I：
10.1109/EDL.1983.25656
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：81 / 84
页数：4
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