Far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under forward DC bias

被引：1

作者：

Xiao Wenbo ^{[1
]}

He Xingdao ^{[1
]}

Gao Yiqing ^{[1
]}

Zhang Zhimin ^{[1
]}

Liu Jiangtao ^{[2
]}

机构：

[1] Nanchang Hangkong Univ, Key Lab Nondestruct Test, Minist Educ, Nanchang 330063, Jiangxi, Peoples R China

[2] Nanchang Univ, Dept Phys, Nanchang 330031, Jiangxi, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2012年 / 33卷 / 06期

基金：

中国国家自然科学基金;

关键词：

triple-junction solar cell; electroluminescence; characteristics;

D O I：

10.1088/1674-4926/33/6/064008

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge solar cell are investigated under forward DC bias at room temperature in dark conditions. An electroluminescence viewgraph shows the clear device structures, and the electroluminescence intensity is shown to increases exponentially with bias voltage and linearly with bias current. The results can be interpreted using an equivalent circuit of a single ideal diode model for triple-junction solar cells. The good fit between the measured and calculated data proves the above conclusions. This work is of guiding significance for current solar cell testing and research.

引用

页数：4

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