EXCITONIC SPECTRA IN SEMICONDUCTOR NANOSTRUCTURES

被引：0
|
作者：
ZIMMERMANN, R
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 34卷
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暂无
中图分类号：
O59 [应用物理学];
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摘要：
Due to the carrier confinement in nanostructures, the Coulomb attraction between electrons and holes is enhanced, and the exciton bound states dominate more than in bulk material. Results from a numerical solution of the Schrodinger equation can be visualized introducing the concept of an ''effective dimension''. Further, such refinements as image charge effects, excitons in type-II quantum structures, and inhomogeneous broadening due to interface roughness are discussed.
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页码：228 / 231
页数：4
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