CHEMICAL BEAM EPITAXY OF ALGAAS AND ALINAS USING TRIMETHYLAMINE ALANE PRECURSOR

被引：11

作者：

BENCHIMOL, JL

ZHANG, XQ

GAO, Y

LEROUX, G

THIBIERGE, H

ALEXANDRE, F

机构：

[1] Centre National d'Etudes des Télécommunications (CNET), Laboratoire de Bagneux, F-92220 Bagneux

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90389-Z

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

AlxGa1-xAs and AlxIn1-xAs alloys were grown on GaAs and InP, respectively, by chemical beam epitaxy, using trimethylamine alane (TMAA) as the source of aluminium. TMAA could be used properly only after some problems had been solved. Low carbon and oxygen concentrations were obtained in both alloys, leading to residual hole concentrations of 2 x 10(16) cm-3 in Al0.3Ga0.7As. The abruptness of the AlGaAs/GaAs interface proved the absence of TMAA memory effect. The control of AlxIn1-xAs solid composition was more difficult than for GaxIn1-xAs, but was less sensitive to growth temperature. Photoluminescence intensities of Al0.3Ga0.7As and Al0.48In0.52As grown at 510-degrees-C were similar to those of MBE grown materials.

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页码：189 / 194

页数：6

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