EPITAXIAL-GROWTH OF GAAS FILMS ON CR-DOPED GAAS SUBSTRATES BY IONIZED GA AND AS BEAM DEPOSITION

被引：1
作者：
YOKOTA, K
TAMURA, S
KATAYAMA, S
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1986年 / 75卷 / 03期
关键词：
D O I：
10.1016/0022-0248(86)90097-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：513 / 520
页数：8
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