EPITAXIAL-GROWTH OF GAAS FILMS ON CR-DOPED GAAS SUBSTRATES BY IONIZED GA AND AS BEAM DEPOSITION

被引：1
作者：
YOKOTA, K
TAMURA, S
KATAYAMA, S
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1986年 / 75卷 / 03期
关键词：
D O I：
10.1016/0022-0248(86)90097-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：513 / 520
页数：8
相关论文
共 50 条
  • [1] EPITAXIAL-GROWTH OF CARBON-DOPED P-TYPE GAAS FILMS BY IONIZED CLUSTER BEAM
    TAKAOKA, GH
    HAGA, Y
    TSUJI, H
    ISHIKAWA, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4) : 873 - 875
  • [2] EPITAXIAL-GROWTH OF GASE FILMS BY MOLECULAR-BEAM EPITAXY ON GAAS(111), GAAS(001) AND GAAS(112) SUBSTRATES
    KOJIMA, N
    SATO, K
    YAMADA, A
    KONAGAI, M
    TAKAHASHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (10B): : L1482 - L1484
  • [3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF BORON-DOPED GAAS FILMS
    HOKE, WE
    LEMONIAS, PJ
    WEIR, DG
    HENDRIKS, HT
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 902 - 904
  • [4] GROWTH OF GAAS FILMS ON GAAS SUBSTRATES BY BEAM DEPOSITION TECHNIQUE
    TAMURA, S
    TUZI, N
    YOKOTA, K
    KATAYAMA, S
    PROCEEDINGS OF THE 7TH SYMPOSIUM ON ION BEAM TECHNOLOGY, 1989, : 53 - 58
  • [5] EPITAXIAL-GROWTH OF GE ON GAAS SUBSTRATES
    KRAUTLE, H
    ROENTGEN, P
    BENEKING, H
    JOURNAL OF CRYSTAL GROWTH, 1983, 65 (1-3) : 439 - 443
  • [6] ICE DEPOSITION AND EPITAXIAL-GROWTH OF GAAS THIN-FILMS
    SHINOHARA, M
    OHTANI, F
    ISHIYAMA, O
    ASARI, M
    SARAIE, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 99 (1-4) : 576 - 579
  • [7] HIGH MOBILITY GAAS AND CR-DOPED GAAS EPITAXIAL LAYERS BY MBE
    MORKOC, H
    CHO, AY
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C121 - C121
  • [8] EPITAXIAL-GROWTH OF CU FILMS ON SI BY IONIZED CLUSTER BEAM DEPOSITION
    SOSNOWSKI, M
    USUI, H
    YAMADA, I
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03): : 1470 - 1473
  • [9] EPITAXIAL-GROWTH OF PBTE ON (100) GAAS SUBSTRATES
    CLEMENS, H
    OFNER, P
    BAUER, G
    HONG, JM
    CHANG, LL
    MATERIALS LETTERS, 1988, 7 (04) : 127 - 130
  • [10] CHEMICAL BEAM EPITAXIAL-GROWTH OF STRAINED CARBON-DOPED GAAS
    CHIU, TH
    CUNNINGHAM, JE
    DITZENBERGER, JA
    JAN, WY
    APPLIED PHYSICS LETTERS, 1990, 57 (02) : 171 - 173
12345