HIGH-SPEED INGAASP CONSTRICTED-MESA LASERS

被引：157
作者：
BOWERS, JE
HEMENWAY, BR
GNAUCK, AH
WILT, DP
机构：
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
[2] STANFORD UNIV,STANFORD,CA 94305
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1986年 / 22卷 / 06期
关键词：
INTEGRATED OPTICS - Components - LIGHT - Modulation - SEMICONDUCTING INDIUM COMPOUNDS - Applications;
D O I：
10.1109/JQE.1986.1073043
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The approach used to achieve a record 26. 5-GHz bandwidth in a 1. 3- mu m InGaAsP laser at minus 60 degree C is described. The small-signal modulation characteristics of a number of different laser structures are compared. Several large-signal modulation experiments are described with emphasis on the laser response to 8-Gb/s modulation.
引用
收藏
页码：833 / 844
页数：12
相关论文
共 39 条
[1]   26.5 GHZ BANDWIDTH INGAASP LASERS WITH TIGHT OPTICAL CONFINEMENT [J].
BOWERS, E ;
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BOWERS, JE ;
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ELECTRONICS LETTERS, 1985, 21 (09) :392-393
[5]   INGAAS PIN PHOTODETECTORS WITH MODULATION RESPONSE TO MILLIMETER WAVELENGTHS [J].
BOWERS, JE ;
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ELECTRONICS LETTERS, 1985, 21 (18) :812-814
[6]   HIGH-FREQUENCY CONSTRICTED MESA LASERS [J].
BOWERS, JE ;
HEMENWAY, BR ;
GNAUCK, AH ;
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WILT, DP ;
MAYNARD, S .
APPLIED PHYSICS LETTERS, 1985, 47 (02) :78-80
[7]   1.55 MU-M MULTISECTION RIDGE LASERS [J].
BOWERS, JE ;
COLDREN, LA ;
HEMENWAY, BR ;
MILLER, BI ;
MARTIN, RJ .
ELECTRONICS LETTERS, 1983, 19 (14) :523-525
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BOWERS JE, 1984, IQEC ANAHEIM
[9]  
BOWERS JE, 1985, CLEO BALTIMORE
[10]  
BRIDGES TE, UNPUB
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