BREAKDOWN VOLTAGE ENHANCEMENT FOR DEVICES ON THIN SILICON LAYER SILICON DIOXIDE FILM

被引：78

作者：

NAKAGAWA, A ^{[1
]}

YASUHARA, N ^{[1
]}

BABA, Y ^{[1
]}

机构：

[1] TOSHIBA CO LTD,CTR MICROELECTR,SAIWAI KU,KAWASAKI 210,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 07期

关键词：

D O I：

10.1109/16.85162

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Studies of high-voltage lateral device structures on a thin silicon layer over silicon dioxide have been carried out. It was found both theoretically and experimentally that over 600-V devices can be realized using a structure consisting of an n diffusion layer over 15-mu-m-thick high-resistivity n- silicon layer over 3-mu-m silicon dioxide (SOI). A method is presented to enhance breakdown voltage by applying a large share of the voltage to the bottom oxide.

引用

页码：1650 / 1654

页数：5

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