ANALYSIS OF DC CHARACTERISTICS OF GAALAS-GAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS

[1] DOUBLE HETEROJUNCTION NPN GAAIAS GAAS BIPOLAR-TRANSISTOR [J]. ELECTRONICS LETTERS, 1982, 18 (01) : 25 - 26

[2] Beneking H., 1982, Microelectronics Journal, V13, P5, DOI 10.1016/S0026-2692(82)80002-5

[3] BOUYAKYAOUI A, 1983, THESIS U SABATIER TO

[4] CAQUOT E, 1984, PHYSICA B

[5] DANGLA J, 1984, PHYSICA B

[6] DUBON C, 1983, P IEEE ELECTRON DEVI, P689

[7] DEVICE MODELING [J]. PROCEEDINGS OF THE IEEE, 1983, 71 (01) : 10 - 33

[8] COLLECTOR EMITTER OFFSET VOLTAGE IN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. ELECTRONICS LETTERS, 1984, 20 (19) : 766 - 767

[9] HAYES JR, 1983, P IEDM WASHINGTON, P686

[10] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[1] DOUBLE HETEROJUNCTION NPN GAAIAS GAAS BIPOLAR-TRANSISTOR [J]. ELECTRONICS LETTERS, 1982, 18 (01) : 25 - 26

[2] Beneking H., 1982, Microelectronics Journal, V13, P5, DOI 10.1016/S0026-2692(82)80002-5

[3] BOUYAKYAOUI A, 1983, THESIS U SABATIER TO

[4] CAQUOT E, 1984, PHYSICA B

[5] DANGLA J, 1984, PHYSICA B

[6] DUBON C, 1983, P IEEE ELECTRON DEVI, P689

[7] DEVICE MODELING [J]. PROCEEDINGS OF THE IEEE, 1983, 71 (01) : 10 - 33

[8] COLLECTOR EMITTER OFFSET VOLTAGE IN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. ELECTRONICS LETTERS, 1984, 20 (19) : 766 - 767

[9] HAYES JR, 1983, P IEDM WASHINGTON, P686

[10] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25