ANALYSIS OF DC CHARACTERISTICS OF GAALAS-GAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：13

作者：

ANKRI, D

AZOULAY, R

CAQUOT, E

DANGLA, J

DUBON, C

PALMIER, JF

机构：

[1] CNET, Lab de Bagneux, Bagneux, Fr, CNET, Lab de Bagneux, Bagneux, Fr

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 02期

关键词：

D O I：

10.1016/0038-1101(86)90032-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：141 / 149

页数：9

共 14 条

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[2]

Beneking H., 1982, Microelectronics Journal, V13, P5, DOI 10.1016/S0026-2692(82)80002-5

[3]

BOUYAKYAOUI A, 1983, THESIS U SABATIER TO

[4]

CAQUOT E, 1984, PHYSICA B

[5]

DANGLA J, 1984, PHYSICA B

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DUBON C, 1983, P IEEE ELECTRON DEVI, P689

[7] DEVICE MODELING [J].

ENGL, WL ;

DIRKS, HK ;

MEINERZHAGEN, B .

PROCEEDINGS OF THE IEEE, 1983, 71 (01) :10-33

[8] COLLECTOR EMITTER OFFSET VOLTAGE IN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

HAYES, JR ;

GOSSARD, AC ;

WIEGMANN, W .

ELECTRONICS LETTERS, 1984, 20 (19) :766-767

[9]

HAYES JR, 1983, P IEDM WASHINGTON, P686

[10] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

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