SILICON SELECTIVE AND LATERAL OVERGROWTH EPITAXY - GROWTH AND ELECTRICAL EVALUATION FOR DEVICES

被引：4
|
作者：
FRIEDRICH, J [1 ]
NEUDECK, GW [1 ]
LIU, ST [1 ]
机构：
[1] HONEYWELL SSED,PLYMOUTH,MN 55441
来源：
JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期
关键词：
D O I：
10.1051/jphyscol:1988414
中图分类号：
学科分类号：
摘要：
引用
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页码：71 / 74
页数：4
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