SILICON SELECTIVE AND LATERAL OVERGROWTH EPITAXY - GROWTH AND ELECTRICAL EVALUATION FOR DEVICES

被引：4

作者：

FRIEDRICH, J ^{[1
]}

NEUDECK, GW ^{[1
]}

LIU, ST ^{[1
]}

机构：

[1] HONEYWELL SSED,PLYMOUTH,MN 55441

来源：

JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期

关键词：

D O I：

10.1051/jphyscol:1988414

中图分类号：

学科分类号：

摘要：

引用

页码：71 / 74

页数：4

共 11 条

[1]

BORLAND JO, 1985, SOLID STATE TECHNOL, V28, P141

[2]

BRONNER G, 1988, S VLSI TECH, P21

[3]

Drowley C. I., 1987, Proceedings of the Tenth International Conference on Chemical Vapor Deposition 1987, P243

[4]

Drowley C. I., 1987, Proceedings of the Tenth International Conference on Chemical Vapor Deposition 1987, P418

[5]

FRIEDRICH J, IN PRESS J APPL PHYS

[6] INTERACTION OF H2O WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2 [J].

GHIDINI, G ;

SMITH, FW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :2924-2928

[7] ROLE OF OXYGEN IN DEFECT-RELATED BREAKDOWN IN THIN SIO2-FILMS ON SI (100) [J].

HOFMANN, K ;

RUBLOFF, GW ;

YOUNG, DR .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (09) :4584-4588

[8] DEVICE CHARACTERIZATION ON MONOCRYSTALLINE SILICON GROWN OVER SIO2 BY THE ELO (EPITAXIAL LATERAL OVERGROWTH) PROCESS [J].

JASTRZEBSKI, L ;

IPRI, AC ;

CORBOY, JF .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (02) :32-35

[9] LOW-TEMPERATURE SILICON EPITAXY BY HOT WALL ULTRAHIGH-VACUUM LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION TECHNIQUES - SURFACE OPTIMIZATION [J].

MEYERSON, BS ;

GANIN, E ;

SMITH, DA ;

NGUYEN, TN .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) :1232-1235

[10] REACTION OF OXYGEN WITH SI(111) AND (100) - CRITICAL CONDITIONS FOR THE GROWTH OF SIO2 [J].

SMITH, FW ;

GHIDINI, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) :1300-1306

← 1 2 →