THE EFFECT OF SURFACE-STATES AND FIXED CHARGE ON THE FIELD-EFFECT CONDUCTANCE OF AMORPHOUS-SILICON

被引：57

作者：

POWELL, MJ

PRITCHARD, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 06期

关键词：

D O I：

10.1063/1.332486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3244 / 3248

页数：5

共 10 条

[1]

Gladwell I., 1979, ACM Transactions on Mathematical Software, V5, P386, DOI 10.1145/355853.355856

[2] ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J].

GOODMAN, NB ;

FRITZSCHE, H .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01) :149-165

[3] A SIMPLE SCHEME FOR EVALUATING FIELD-EFFECT DATA [J].

GRUNEWALD, M ;

THOMAS, P ;

WURTZ, D .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1980, 100 (02) :K139-K143

[4]

MADAN A, 1977, 7TH P INT C AM LIQ S, P377

[5]

MADAN A, 1976, J NONCRYST SOLIDS, V20, P238

[6] ANNEALING AND LIGHT-INDUCED-CHANGES IN THE FIELD-EFFECT CONDUCTANCE OF AMORPHOUS-SILICON [J].

POWELL, MJ ;

EASTON, BC ;

NICHOLLS, DH .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :5068-5078

[7] ANALYSIS OF FIELD-EFFECT-CONDUCTANCE MEASUREMENTS ON AMORPHOUS-SEMICONDUCTORS [J].

POWELL, MJ .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 43 (01) :93-103

[8]

PROTHERO A, 1976, MODERN NUMERICAL MET, P152

[9] DUAL-GATE A-SI-H THIN-FILM TRANSISTORS [J].

TUAN, HC ;

THOMPSON, MJ ;

JOHNSON, NM ;

LUJAN, RA .

ELECTRON DEVICE LETTERS, 1982, 3 (12) :357-359

[10] AN IMPROVED FIELD-EFFECT ANALYSIS FOR THE DETERMINATION OF THE PSEUDOGAP-STATE DENSITY IN AMORPHOUS-SEMICONDUCTORS [J].

WEISFIELD, RL ;

ANDERSON, DA .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1981, 44 (01) :83-93

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