OPTICAL AND INTERVALLEY SCATTERING IN QUANTIZED INVERSION LAYERS IN SEMICONDUCTORS

被引:64
作者
FERRY, DK [1 ]
机构
[1] USN,OFF NAVAL RES,PROGRAM ELECTR & SOLID STATE SCI,ARLINGTON,VA 22217
关键词
D O I
10.1016/0039-6028(76)90178-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:218 / 228
页数:11
相关论文
共 33 条
[1]   IONISED IMPURITY SCATTERING IN SILICON SURFACE CHANNELS [J].
BERZ, F .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :903-&
[2]   EFFECT OF CHARGE INHOMOGENEITIES ON SILICON SURFACE MOBILITY [J].
CHENG, YC .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (05) :2425-2427
[3]  
Conwell E M, 1967, HIGH FIELD TRANSPORT
[4]   SURFONS AND ELECTRON-MOBILITY IN SILICON INVERSION LAYERS [J].
EZAWA, H ;
KAWAJI, S ;
NAKAMURA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) :126-155
[5]   ELECTRON MOBILITY IN A SEMICONDUCTOR INVERSION LAYER - POSSIBLE CONTRIBUTION FROM BULK PHONONS [J].
EZAWA, H ;
KAWAJI, S ;
KURODA, T ;
NAKAMURA, K .
SURFACE SCIENCE, 1971, 24 (02) :659-&
[6]   SURFONS AND ELECTRON MOBILITY IN A SEMICONDUCTOR INVERSION LAYER [J].
EZAWA, H ;
KAWAJI, S ;
NAKAMURA, K .
SURFACE SCIENCE, 1971, 27 (01) :218-&
[7]  
EZAWA H, 1975, INT C ELECTRONIC PRO
[8]   TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].
FANG, FF ;
FOWLER, AB .
PHYSICAL REVIEW, 1968, 169 (03) :619-+
[9]  
FERRY DK, TO BE PUBLISHED
[10]  
FRANKL DR, 1967, ELECTRICAL PROPERTIE