Raman scattering studies on PZT thin films for trigonal-tetragonal phase transition

被引：4

作者：

Liang Ting ^{[1
]}

Li Junhong ^{[1
]}

Du Wenlong ^{[1
]}

Xue Chenyang ^{[1
]}

Zhang Wendong ^{[1
]}

机构：

[1] North Univ China, Key Lab Instrumentat Sci & Dynam Measurement, Chinese Minist Educ, Taiyuan 030051, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2009年 / 30卷 / 08期

基金：

国家高技术研究发展计划(863计划);

关键词：

PZT; Raman scattering; phase transition;

D O I：

10.1088/1674-4926/30/8/083001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

PZT thin films were successfully prepared through sol-gel. The annealing temperature was confirmed through DTA analyzing. The trigonal and tetragonal phase transition was analyzed through Raman scattering. The intensity of the A(1)(2TO) mode and the A(1)(3TO)(T) mode were enhanced with the increase of the annealing temperature. So, the conclusions were obtained that the trigonal phase turned into a tetragonal phase as temperature increased.

引用

页数：3

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