SUBTHRESHOLD CHARACTERISTICS OF DMOS AND CMOS TRANSISTORS IN HIGH-VOLTAGE BCDMOS TECHNOLOGY

被引：1
作者：
LU, CY
MORGAN, MC
TSAI, NS
机构：
[1] AT&T Bell Lab, Allentown, PA,, USA, AT&T Bell Lab, Allentown, PA, USA
来源：
SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 08期
关键词：
D O I：
10.1016/0038-1101(87)90003-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
TRANSISTORS, FIELD EFFECT
引用
收藏
页码：793 / 799
页数：7
相关论文
共 18 条
[1]   LOW-LEVEL CURRENTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS [J].
BARRON, MB .
SOLID-STATE ELECTRONICS, 1972, 15 (03) :293-+
[2]   DIELECTRIC ISOLATION - COMPREHENSIVE, CURRENT AND FUTURE [J].
BEAN, KE ;
RUNYAN, WR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (01) :C5-C12
[3]   SUB-THRESHOLD BEHAVIOR OF UNIFORMLY AND NONUNIFORMLY DOPED LONG-CHANNEL MOSFET [J].
BREWS, JR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (09) :1282-1291
[4]  
DECLERCQ MJ, 1977, IEEE J SOLID-ST CIRC, V12, P264
[5]   MOS MODELING BY ANALYTICAL APPROXIMATIONS .1. SUB-THRESHOLD CURRENT AND THRESHOLD VOLTAGE [J].
FICHTNER, W ;
POTZL, HW .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1979, 46 (01) :33-55
[6]  
HARPER DH, 1978, IEEE IEDM, P34
[7]  
LIN HC, 1973, IEEE T ELECTRON DEV, VED20, P275
[8]  
MCLINTOCK GA, 1972, IEEE IEDM, P24
[9]   DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J].
OGURA, S ;
TSANG, PJ ;
WALKER, WW ;
CRITCHLOW, DL ;
SHEPARD, JF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1359-1367
[10]  
Ogura S., 1982, International Electron Devices Meeting. Technical Digest, P718
12