1-GHZ 5-MA 128/129 GAAS PRESCALER IC

被引：6

作者：

TAKADA, T ^{[1
]}

SAITO, S ^{[1
]}

KATO, N ^{[1
]}

IDDA, M ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, YOKOSUKA ELECT COMMUN LABS, YOKOSUKA 238, JAPAN

来源：

关键词：

D O I：

10.1049/el:19850516

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：731 / 733

页数：3

共 6 条

[1] AKAZAWA, 1982, REV EL COMM, V30, P346
[2] DIRECT OBSERVATION OF DISLOCATION EFFECTS ON THRESHOLD VOLTAGE OF A GAAS FIELD-EFFECT TRANSISTOR
MIYAZAWA, S
ISHII, Y
ISHIDA, S
NANISHI, Y
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 853 - 855
[3] NAKANISHI H, 1984, 16TH 1984 INT C SOL, P63
[4] SHIMIZU S, 1984, ISSCC84 TECHN PAP, P52
[5] TAKADA T, 1981, NATIONAL CONVENTION, V122, P123
[6] BELOW 10 PS/GATE OPERATION WITH BURIED P-LAYER SAINT FETS
YAMASAKI, K
KATO, N
HIRAYAMA, M
[J]. ELECTRONICS LETTERS, 1984, 20 (25-2) : 1029 - 1031