INFRARED REFLECTION ABSORPTION-SPECTROSCOPY OF ADSORBATES ON SEMICONDUCTORS WITH BURIED METAL LAYERS - O-2/GAAS

被引：32

作者：

BERMUDEZ, VM

PROKES, SM

机构：

[1] Naval Research Laboratory, Washington

来源：

SURFACE SCIENCE | 1991年 / 248卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(91)90073-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A technique is described whereby infrared reflection-absorption spectra of submonolayer coverages of small molecules adsorbed on ordered single-crystal surfaces of elemental and compound semiconductors can be obtained in a single external reflection. Molecular beam epitaxy is used to form a "buried metal layer" under the semiconductor surface of interest. Spectra can then be obtained at grazing incidence in p-polarization, as for a bare metal substrate. The method is illustrated for H on Si and O on GaAs.

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页码：201 / 206

页数：6

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