SURFACE-STRUCTURES OF THE (AL,GA)SB SYSTEM

被引：10

作者：

PIAO, J ^{[1
]}

BERESFORD, R ^{[1
]}

WANG, WI ^{[1
]}

机构：

[1] COLUMBIA UNIV,MICROELECTR SCI LABS,NEW YORK,NY 10027

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期

关键词：

D O I：

10.1116/1.584826

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：276 / 278

页数：3

共 12 条

[1] RECONSTRUCTIONS OF GAAS AND AIAS SURFACES AS A FUNCTION OF METAL TO AS RATIO
BACHRACH, RZ
BAUER, RS
CHIARADIA, P
HANSSON, GV
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 335 - 343
[2] RESONANT TUNNELING OF HOLES IN ALSB GASB ALSB DOUBLE-BARRIER HETEROSTRUCTURES
BERESFORD, R
LUO, LF
WANG, WI
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (07) : 694 - 695
[3] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY
CHANG, CA
LUDEKE, R
CHANG, LL
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 759 - 761
[4] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1733 - 1735
[5] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &
[6] INTERBAND TUNNELING IN POLYTYPE GASB/ALSB/INAS HETEROSTRUCTURES
LUO, LF
BERESFORD, R
WANG, WI
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (19) : 2023 - 2025
[7] MORPHOLOGY OF GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
STALL, RA
ZILKO, J
SWAMINATHAN, V
SCHUMAKER, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 524 - 527
[8] INFLUENCE OF [V]/[III]BEAM RATIO ON CRYSTAL QUALITIES OF GASB-ALSB SUPERLATTICE FILMS GROWN BY MOLECULAR-BEAM EPITAXY
SUZUKI, Y
OHMORI, Y
OKAMOTO, H
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) : 3760 - 3767
[9] STRUCTURAL-ANALYSIS OF SI(111)-7X7 BY UHV-TRANSMISSION ELECTRON-DIFFRACTION AND MICROSCOPY
TAKAYANAGI, K
TANISHIRO, Y
TAKAHASHI, M
TAKAHASHI, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 1502 - 1506
[10] MOLECULAR-BEAM EPITAXIAL GAAS-ALXGA1-XAS HETEROSTRUCTURES FOR METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR APPLICATIONS
WANG, WI
JUDAPRAWIRA, S
WOOD, CEC
EASTMAN, LF
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 708 - 710

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