POROUS SILICON INVESTIGATED BY POSITRON-ANNIHILATION

被引：11
作者：
DELACRUZ, RM
PAREJA, R
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 111卷 / 02期
关键词：
D O I：
10.1002/pssa.2211110209
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：463 / 468
页数：6
相关论文
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