EXPERIMENTAL-EVIDENCE FOR RELAXATION PHENOMENA IN HIGH-PURITY SILICON

被引：11
作者：
CAVICCHI, BT
HAEGEL, NM
机构：
来源：
PHYSICAL REVIEW LETTERS | 1989年 / 63卷 / 02期
关键词：
D O I：
10.1103/PhysRevLett.63.195
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：195 / 198
页数：4
相关论文
共 17 条
  • [1] BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS
  • [2] ENERGY-LEVELS IN SILICON
    CHEN, JW
    MILNES, AG
    [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 : 157 - 228
  • [3] INFLUENCE OF DIELECTRIC-RELAXATION ON CURRENT FLOW IN HIGH-OHMIC SEMICONDUCTING DIODES
    HEDER, G
    MADELUNG, O
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 30 (01): : 215 - 221
  • [4] ELECTRONIC CHARGE TRANSPORT IN HIGH-RESISTIVITY SEMICONDUCTORS
    HENISCH, HK
    MANIFACIER, JC
    MOREAU, Y
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (03): : 379 - 389
  • [5] ILLEGEMES M, 1975, PHYS REV B, V12, P1443
  • [6] REVIEW OF SOME CHARGE TRANSPORT PROPERTIES OF SILICON
    JACOBONI, C
    CANALI, C
    OTTAVIANI, G
    QUARANTA, AA
    [J]. SOLID-STATE ELECTRONICS, 1977, 20 (02) : 77 - 89
  • [7] MINORITY-CARRIER INJECTION INTO SEMICONDUCTORS
    MANIFACIER, JC
    HENISCH, HK
    [J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2640 - 2647
  • [8] MINORITY-CARRIER INJECTION INTO RELAXATION SEMICONDUCTORS
    MOREAU, Y
    MANIFACIER, JC
    HENISCH, HK
    [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) : 2904 - 2909
  • [9] CARRIER TRANSPORT AND POTENTIAL DISTRIBUTIONS FOR A SEMICONDUCTOR P-N JUNCTION IN RELAXATION REGIME
    QUEISSER, HJ
    CASEY, HC
    VANROOSB.W
    [J]. PHYSICAL REVIEW LETTERS, 1971, 26 (10) : 551 - &
  • [10] MINORITY-CARRIER INJECTION AND EXTRACTION IN N-TYPE GERMANIUM
    RIEDER, G
    HENISCH, HK
    RAHIMI, S
    MANIFACIER, JC
    [J]. PHYSICAL REVIEW B, 1980, 21 (02): : 723 - 729
12