DEFECT SPATIAL DISTRIBUTIONS IN ANNEALED ION-IMPLANTED SILICON MEASURED BY A TRANSIENT CAPACITANCE TECHNIQUE

被引：38
|
作者：
WANG, KL [1 ]
机构：
[1] GE,CTR RES & DEV,SCHENECTADY,NY 12301
来源：
APPLIED PHYSICS LETTERS | 1976年 / 29卷 / 11期
关键词：
D O I：
10.1063/1.88931
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：700 / 702
页数：3
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