MULTILAYER GAAS-AL0.3GA0.7AS DIELECTRIC QUARTER WAVE STACKS GROWN BY MOLECULAR-BEAM EPITAXY

被引:76
作者
VANDERZIEL, JP [1 ]
ILEGEMS, M [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源
APPLIED OPTICS | 1975年 / 14卷 / 11期
关键词
D O I
10.1364/AO.14.002627
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:2627 / 2630
页数:4
相关论文
共 17 条
[1]  
Abeles F., 1950, ANN PHYS-PARIS, V12, P596, DOI [DOI 10.1051/ANPHYS/195012050596, 10.1051/anphys/195012050596]
[2]  
Abeles F, 1950, ANN PHYS-PARIS, V5, P706
[3]   REFRACTIVE-INDEX OF GA1-XALXAS [J].
AFROMOWITZ, MA .
SOLID STATE COMMUNICATIONS, 1974, 15 (01) :59-63
[4]  
Born M., 1964, PRINCIPLES OPTICS, P51
[5]  
BREKHOVSKIKH LM, 1960, WAVES LAYERED MEDIA, P79
[6]   FILM DEPOSITION BY MOLECULAR-BEAM TECHNIQUES [J].
CHO, AY .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05) :S31-&
[8]   QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].
DINGLE, R ;
WIEGMANN, W ;
HENRY, CH .
PHYSICAL REVIEW LETTERS, 1974, 33 (14) :827-830
[9]  
DINGLE R, COMMUNICATION
[10]  
Ilegems M., 1975, J APPL PHYS, V46, P3059