INTERNAL MICROWAVE PROPAGATION AND DISTORTION CHARACTERISTICS OF TRAVELING-WAVE AMPLIFIERS STUDIED BY ELECTROOPTIC SAMPLING

被引：19

作者：

RODWELL, MJW ^{[1
]}

RIAZIAT, M ^{[1
]}

WEINGARTEN, KJ ^{[1
]}

AULD, BA ^{[1
]}

BLOOM, DM ^{[1
]}

机构：

[1] VARIAN ASSOCIATES,RES CTR,PALO ALTO,CA 94303

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1986年 / 34卷 / 12期

关键词：

D O I：

10.1109/TMTT.1986.1133549

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1356 / 1362

页数：7

共 10 条

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[2] 2 20-GHZ GAAS TRAVELING-WAVE POWER-AMPLIFIER [J].

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[4] ELECTRO-OPTIC SAMPLING OF PLANAR DIGITAL GAAS INTEGRATED-CIRCUITS [J].

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[5] ELECTROOPTIC SAMPLING IN GAAS INTEGRATED-CIRCUITS [J].

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[6] LARGE-SIGNAL CRITERIA FOR THE DESIGN OF GAAS-FET DISTRIBUTED POWER-AMPLIFIERS [J].

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[7]

Riaziat M., 1986, 1986 IEEE - MTT-S International Microwave Symposium Digest (Cat. No.86CH2031-0), P337

[8]

RODWELL MJW, 1986, ELECTRON LETT, V9, P501

[9] SUBPICOSECOND ELECTRICAL SAMPLING [J].

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (04) :664-667

[10] DIRECT ELECTRO-OPTIC SAMPLING OF GAAS INTEGRATED-CIRCUITS [J].

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