COMPENSATION IN EPITAXIAL CUBIC SIC FILMS

被引：50

作者：

SEGALL, B ^{[1
]}

ALTEROVITZ, SA ^{[1
]}

HAUGLAND, EJ ^{[1
]}

MATUS, LG ^{[1
]}

机构：

[1] NASA, LEWIS RES CTR, CLEVELAND, OH 44135 USA

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 10期

关键词：

D O I：

10.1063/1.97048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：584 / 586

页数：3

共 16 条

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[2]

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[3]

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EDDOLLS, DV .

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[7] ELECTRON-CYCLOTRON RESONANCE IN CUBIC SIC [J].

KAPLAN, R ;

WAGNER, RJ ;

KIM, HJ ;

DAVIS, RF .

SOLID STATE COMMUNICATIONS, 1985, 55 (01) :67-69

[8] THERMAL-STRESSES IN HETEROEPITAXIAL BETA SILICON-CARBIDE THIN-FILMS GROWN ON SILICON SUBSTRATES [J].

LIAW, HP ;

DAVIS, RF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) :3014-3018

[9]

MATUS LG, UNPUB REV SCI INSTRU, V57

[10]

NIEBERDING WC, 1983, RES DEV, V25, P148

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