SUMMARY ABSTRACT - INCORPORATION OF GAAS/ALAS SUPERLATTICES FOR IMPROVEMENT OF MOLECULAR-BEAM EPITAXY MATERIALS - GAAS AND MODULATION-DOPED GAAS/ALGAAS

被引:0
作者
WEBB, C
CHAI, YG
BANDY, SG
NISHIMOTO, C
BIVAS, A
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期
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D O I
10.1116/1.583581
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:633 / 634
页数:2
相关论文
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[1]   HIGH-PERFORMANCE INVERTED AND LARGE CURRENT DOUBLE INTERFACE MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH THE BULK (AL,GA)AS REPLACED BY SUPERLATTICE AT THE INVERTED INTERFACE [J].
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[8]   SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY FOR HIGH ELECTRON-MOBILITY TRANSISTOR IC APPLICATIONS [J].
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[9]   EFFECTS OF SUBSTRATE TEMPERATURES ON THE DOPING PROFILES OF SI IN SELECTIVELY DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION STRUCTURES [J].
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