STEP-DRIVEN LATERAL SEGREGATION AND LONG-RANGE ORDERING DURING SIXGE1-X EPITAXIAL-GROWTH

被引：53

作者：

JESSON, DE ^{[1
]}

PENNYCOOK, SJ ^{[1
]}

BARIBEAU, JM ^{[1
]}

HOUGHTON, DC ^{[1
]}

机构：

[1] NATL RES COUNCIL CANADA, INST MICROSTRUCT SCI, OTTAWA K1A 0R6, ONTARIO, CANADA

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.68.2062

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Lateral segregation occurring at advancing steps is identified as the origin of a new long-range ordered phase in SixGe1-x alloys, which has been imaged directly. The segregation occurs at monolayer height type-S(B) steps under island growth conditions and is strongly dependent on growth kinetics.

引用

页码：2062 / 2065

页数：4

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