REDUCTION IN POLYSILICON OXIDE LEAKAGE CURRENT BY ANNEALING PRIOR TO OXIDATION

被引：25

作者：

SHINADA, K

MORI, S

MIKATA, Y

机构：

[1] Toshiba Corp, Semiconductor Device, Engineering Lab, Kawasaki, Jpn, Toshiba Corp, Semiconductor Device Engineering Lab, Kawasaki, Jpn

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 09期

关键词：

D O I：

10.1149/1.2114316

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2185 / 2188

页数：4

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