ELIMINATION OF GALLIUM-SOURCE RELATED OVAL DEFECTS IN MOLECULAR-BEAM EPITAXY OF GAAS

被引：11
作者：
CHAND, N
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 02期
关键词：
D O I：
10.1116/1.584845
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：160 / 162
页数：3
相关论文
共 21 条
[1]   ORIGIN OF OVAL DEFECTS IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
AKIMOTO, K ;
DOHSEN, M ;
ARAI, M ;
WATANABE, N .
JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) :117-122
[2]   SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].
CHAI, YG ;
CHOW, R .
APPLIED PHYSICS LETTERS, 1981, 38 (10) :796-798
[3]   MBE GROWTH OF HIGH-QUALITY GAAS [J].
CHAND, N .
JOURNAL OF CRYSTAL GROWTH, 1989, 97 (02) :415-429
[4]   REDUCTION AND ORIGIN OF ELECTRON AND HOLE TRAPS IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
CHAND, N ;
SERGENT, AM ;
VANDERZIEL, JP ;
LANG, DV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02) :399-404
[5]  
CHAND N, IN PRESS J CRYST GRO
[6]   PROPERTIES OF SCHOTTKY BARRIERS AND P-N-JUNCTIONS PREPARED WITH GAAS AND ALX GA1-XAS MOLECULAR-BEAM EPITAXIAL LAYERS [J].
CHO, AY ;
CASEY, HC .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1258-1263
[7]   GAAS SUBSTRATE PREPARATION FOR OVAL-DEFECT ELIMINATION DURING MBE GROWTH [J].
FRONIUS, H ;
FISCHER, A ;
PLOOG, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02) :L137-L138
[8]   CLASSIFICATION AND ORIGINS OF GAAS OVAL DEFECTS GROWN BY MOLECULAR-BEAM EPITAXY [J].
FUJIWARA, K ;
KANAMOTO, K ;
OHTA, YN ;
TOKUDA, Y ;
NAKAYAMA, T .
JOURNAL OF CRYSTAL GROWTH, 1987, 80 (01) :104-112
[9]   VOLATILE METAL-OXIDE INCORPORATION IN LAYERS OF GAAS, GA1-XALXAS AND RELATED-COMPOUNDS GROWN BY MOLECULAR-BEAM EPITAXY [J].
KIRCHNER, PD ;
WOODALL, JM ;
FREEOUF, JL ;
PETTIT, GD .
APPLIED PHYSICS LETTERS, 1981, 38 (06) :427-429
[10]  
KOPF R, UNPUB
123