PHOTOSTIMULATED TRANSFORMATION OF INTRABAND STATES IN GLASSY CHALCOGENIDE SEMICONDUCTORS

被引：0

作者：

MIKLA, VI

MATELESHKO, AV

SEMAK, DG

LEVKULICH, AR

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1989年 / 23卷 / 01期

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D O I：

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中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：80 / 83

页数：4

共 9 条

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[2] BARANOVSKII SD, 1988, ZH EKSP TEOR FIZ+, V94, P278
[3] Grenishin S. G., 1970, ELECTROPHOTOGRAPHIC
[4] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS
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[5] PHOTOELECTRIC PHENOMENA IN AMORPHOUS CHALCOGENIDE SEMICONDUCTORS
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[6] DARK DISCHARGE OF SURFACE-POTENTIAL IN DISORDERED MATERIALS (A-SE)
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[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1985, 18 (05) : 901 - 909
[7] HOLE EMISSION DEFECT STATES IN AMORPHOUS AS2SE3
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[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 837 - 842
[8] Mott N. F., 1979, ELECT PROCESSES NONC
[9] SCHLEIN LB, 1974, PHYS REV B, V10, P3451