VARIATION OF GAIN FACTOR OF GAAS LASERS WITH PHOTON AND CURRENT DENSITIES

被引：20

作者：

NANNICHI, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1966年 / 37卷 / 08期

关键词：

D O I：

10.1063/1.1703154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：3009 / &

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共 7 条

[1] ONSET OF STIMULATED EMISSION FROM GALLIUM ARSENIDE SEMICONDUCTOR OPTICAL MASERS [J].

BROOM, RF ;

OLIVER, DJ ;

HILSUM, C ;

GOOCH, CH .

NATURE, 1963, 198 (487) :368-&

[2] SMALL-SIGNAL AMPLIFICATION IN GAAS LASERS - GAAS LASER DIODES SMALL SIGNAL AMPLIFICATION TRAVELING WAVE AMPLIFICATION 77 DEGREES K E/T [J].

CROWE, JW ;

CRAIG, RM .

APPLIED PHYSICS LETTERS, 1964, 4 (03) :57-&

[3] SPONTANEOUS + STIMULATED RECOMBINATION RADIATION IN SEMICONDUCTORS [J].

LASHER, G ;

STERN, F .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (2A) :A553-&

[4] THRESHOLD CURRENTS FOR LINE NARROWING IN GAAS JUNCTION DIODES [J].

MAYBURG, S .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1791-&

[5] MODIFICATION OF THRESHOLD CURRENT OF GAAS LASER BY A REFLECTIVE COATING ON 1 END [J].

NANNICHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (01) :53-&

[6] EFFECT OF TEMPERATURE ON THE STIMULATED EMISSION FROM GAAS P-N JUNCTIONS [J].

PILKUHN, M ;

RUPPRECHT, H ;

BLUM, S .

SOLID-STATE ELECTRONICS, 1964, 7 (12) :905-909

[7] A RELATION BETWEEN CURRENT DENSITY AT THRESHOLD AND LENGTH OF FABRY-PEROT TYPE GAAS LASERS [J].

PILKUHN, M ;

RUPPRECHT, H .

PROCEEDINGS OF THE IEEE, 1963, 51 (09) :1243-&