A CHEMICAL THINNING TECHNIQUE FOR TRANSMISSION ELECTRON-MICROSCOPY CROSS-SECTIONAL SAMPLES

被引：1

作者：

GABORIAUD, RJ ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 05期

关键词：

D O I：

10.1007/BF02655297

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：837 / 844

页数：8

相关论文

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[3] LIDBURY DPG, 1971, ELECTRON ENG, V43, P50
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[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 744 - 747
[5] TRANSMISSION ELECTRON-MICROSCOPY AND RUTHERFORD BACKSCATTERING STUDIES DIFFERENT DAMAGE STRUCTURES IN P+ IMPLANTED SI
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5718 - 5724
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