EQUIVALENCE BETWEEN INTERFACE TRAPS IN SIO2/SI GENERATED BY RADIATION-DAMAGE AND HOT-ELECTRON INJECTION

被引:24
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NISHIOKA, Y
DASILVA, EF
MA, TP
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10.1063/1.99358
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O59 [应用物理学];
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页码:720 / 722
页数:3
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