EQUIVALENCE BETWEEN INTERFACE TRAPS IN SIO2/SI GENERATED BY RADIATION-DAMAGE AND HOT-ELECTRON INJECTION

被引：24
作者：
NISHIOKA, Y
DASILVA, EF
MA, TP
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 09期
关键词：
D O I：
10.1063/1.99358
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：720 / 722
页数：3
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