DEFECT LEVELS IN CHROMIUM-DOPED SILICON

被引：3
|
作者：
KUNIO, T
YAMAZAKI, T
OHTA, E
SAKATA, M
机构：
来源：
SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 02期
关键词：
D O I：
10.1016/0038-1101(83)90117-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：155 / 160
页数：6
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