LOCALIZED EPITAXIAL-GROWTH OF TASI2 ON (111) AND (001)SI BY RAPID THERMAL ANNEALING

被引：10

作者：

WU, IC

CHU, JJ

CHEN, LJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.339693

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：879 / 883

页数：5

共 19 条

[1]

CHANG CA, UNPUB

[2] EPITAXIAL-GROWTH OF ZRSI2 ON SILICON WITH AN ION-BEAM MIXING ASSISTED SCHEME [J].

CHENG, HC ;

CHEN, LJ .

APPLIED PHYSICS LETTERS, 1985, 46 (06) :562-564

[3]

CHIEN CJ, 1985, J APPL PHYS, V57, P1877

[4] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J].

CHOW, TP ;

STECKL, AJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1480-1497

[5]

DHEURLE FM, 1986, MATER RES SOC S P, V52, P261

[6]

FAN JCC, 1985, MRS P, V35, P39

[7] LOCALIZED EPITAXIAL-GROWTH OF C54 AND C49 TISI2 ON (111)SI [J].

FUNG, MS ;

CHENG, HC ;

CHEN, LJ .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1312-1314

[8] CORRELATION OF SCHOTTKY-BARRIER HEIGHT AND MICROSTRUCTURE IN THE EPITAXIAL NI SILICIDE ON SI(111) [J].

LIEHR, M ;

SCHMID, PE ;

LEGOUES, FK ;

HO, PS .

PHYSICAL REVIEW LETTERS, 1985, 54 (19) :2139-2142

[9] LOCALIZED EPITAXIAL-GROWTH OF HEXAGONAL AND TETRAGONAL MOSI2 ON (111) SI [J].

LIN, WT ;

CHEN, LJ .

APPLIED PHYSICS LETTERS, 1985, 46 (11) :1061-1063

[10] LOCALIZED EPITAXIAL-GROWTH OF TETRAGONAL AND HEXAGONAL WSI2 ON (111)SI [J].

LIN, WT ;

CHEN, LJ .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (04) :1515-1518

← 1 2 →