AGING DEGRADATION OF A GUNN DIODE DUE TO INDUCED DISLOCATIONS

被引：6

作者：

HASEGAWA, F ^{[1
]}

ITO, H ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,CENT RES LABS,KAWASAKI,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 05期

关键词：

D O I：

10.1063/1.1663525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1937 / 1943

页数：7

共 12 条

[1]

Alexander H., 1969, SOLID STATE PHYS, V22, P27, DOI DOI 10.1016/S0081-1947(08)60031-4

[2] AGING EFFECTS ON BULK GAAS DEVICES [J].

ALMOUFTI, MN ;

JASKOLSKI, SV ;

ISHII, TK .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (02) :236-+

[3]

BLAKESLEE AE, 1969, ELECTROCHEMICAL SOC

[4] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE [J].

HALL, RN ;

RACETTE, JH .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :379-&

[5] DEGRADATION OF A GUNN DIODE BY DISLOCATIONS INDUCED DURING THERMOCOMPRESSION BONDING [J].

HASEGAWA, F ;

ITO, H .

APPLIED PHYSICS LETTERS, 1972, 21 (03) :107-&

[6] DIFFERENT DIFFUSION BEHAVIOR OF COPPER IN EPITAXIAL AND IN BULK GAAS [J].

HASEGAWA, F .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (05) :1944-1947

[7]

KITAGAWA N, UNPUBLISHED REPORT

[8]

KURU I, 1970, 2 P C SOL STAT DEV T, P137

[9] INFLUENCE OF THERMOCOMPRESSION ON GAAS CRYSTAL FOR GUNN DIODE [J].

MITSUI, S ;

ISHIHARA, O .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (04) :603-&

[10]

NAKANISHI T, 1971, ED7148 IECE PAP

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