CHEMICAL-DEPOSITION OF BI2S3 THIN-FILMS FROM THIOACETAMIDE BATH

被引：55
作者：
DESAI, JD
LOKHANDE, CD
机构：
[1] Department of Physics, Shivaji University, Kolhapur
来源：
MATERIALS CHEMISTRY AND PHYSICS | 1995年 / 41卷 / 02期
关键词：
CHEMICAL DEPOSITION; FILMS; THIOACETAMIDE; BISMUTH;
D O I：
10.1016/0254-0584(95)01538-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Bi2S3 thin films have been deposited from an aqueous acidic bath using thioacetamide CH3-CS-NH2 (TAM) as a sulfide ion source. The preparative parameters are optimized and growth mechanism is discussed. X-ray diffractograms indicate that the films are polycrystalline in nature. A microstructural study has been carried out using a scanning electron microscopy technique. From optical absorption studies the energy bandgap of Bi2S3 is estimated to be 1.84 eV. Room temperature resistivity is of the order of 10(5) ohm cm.
引用
收藏
页码：98 / 103
页数：6
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