THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS

被引：0

作者：

LIN, YH

LEE, CL

LEI, TF

CHAO, TS

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU 30050,TAIWAN

[2] NATL NANO DEVICE LAB,HSINCHU,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 05期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method of using a thin oxide on the top of the poly-Si gate to getter fluorine for BF2+ in pMOS is proposed and demonstrated. Due to less amount of fluorine in the poly-Si as well as in the gate oxide, the boron penetration through the gate oxide is suppressed. The MOS capacitors fabricated by using this method show less shifts and distortion on C-V curves and better electrical characteristics.

引用

页码：164 / 165

页数：2

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