PHOTOLUMINESCENCE AND P-TYPE CONDUCTIVITY IN CDTE-N GROWN BY MOLECULAR-BEAM EPITAXY

被引：40

作者：

DHESE, KA ^{[1
]}

DEVINE, P ^{[1
]}

ASHENFORD, DE ^{[1
]}

NICHOLLS, JE ^{[1
]}

SCOTT, CG ^{[1
]}

SANDS, D ^{[1
]}

LUNN, B ^{[1
]}

机构：

[1] UNIV HULL,DEPT ENGN DESIGN & MANUFACTURE,KINGSTON HULL HU6 7RX,N HUMBERSIDE,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 09期

关键词：

D O I：

10.1063/1.357197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An rf nitrogen (N) plasma source has been used to achieve p-type conductivity in molecular beam epitaxy CdTe layers grown with a Cd overpressure. Photoluminescence and secondary ion mass spectrometry measurements have confirmed the incorporation of the N species, and evidence for the resulting p-type conductivity has been obtained using capacitance-voltage and current-voltage techniques. Net hole concentrations as high as 2X10(17) cm(-3) have so far been achieved, which contrasts with the normally n-type nature of our undoped CdTe layers.

引用

页码：5423 / 5428

页数：6

共 19 条

[11] ACCEPTOR STATES IN CDTE AND COMPARISON WITH ZNTE - GENERAL TRENDS [J].

MOLVA, E ;

PAUTRAT, JL ;

SAMINADAYAR, K ;

MILCHBERG, G ;

MAGNEA, N .

PHYSICAL REVIEW B, 1984, 30 (06) :3344-3354

[12] ELECTRICAL AND OPTICAL-PROPERTIES OF AU IN CADMIUM TELLURIDE [J].

MOLVA, E ;

FRANCOU, JM ;

PAUTRAT, JL ;

SAMINADAYAR, K ;

DANG, LS .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) :2241-2249

[13] EXCITED-STATES OF AG AND CU ACCEPTORS IN CDTE [J].

MOLVA, E ;

CHAMONAL, JP ;

MILCHBERG, G ;

SAMINADAYAR, K ;

PAJOT, B ;

NEU, G .

SOLID STATE COMMUNICATIONS, 1982, 44 (03) :351-355

[14] LOW-RESISTIVITY P-TYPE ZNSE-N GROWN BY MOLECULAR-BEAM EPITAXY USING A NITROGEN FREE-RADICAL SOURCE [J].

PARK, RM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1992, 10 (04) :701-704

[15] P-TYPE ZNSE BY NITROGEN ATOM BEAM DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH [J].

PARK, RM ;

TROFFER, MB ;

ROULEAU, CM ;

DEPUYDT, JM ;

HAASE, MA .

APPLIED PHYSICS LETTERS, 1990, 57 (20) :2127-2129

[16] PROPERTIES OF CDTE-FILMS GROWN ON INSB BY MOLECULAR-BEAM EPITAXY [J].

SUGIYAMA, K .

THIN SOLID FILMS, 1984, 115 (02) :97-107

[17] THE INFLUENCE OF CD OVERPRESSURE IN THE MOLECULAR-BEAM EPITAXY OF INSB/CDTE HETEROSTRUCTURES - A COMBINED RAMAN AND INFRARED-SPECTROSCOPY STUDY [J].

ZAHN, DRT ;

RICHTER, W ;

EICKHOFF, T ;

GEURTS, J ;

GOLDING, TD ;

DINAN, JH ;

MACKEY, KJ ;

WILLIAMS, RH .

APPLIED SURFACE SCIENCE, 1989, 41-2 :497-503

[18] FORMATION OF INTERFACIAL LAYERS IN INSB-CDTE HETEROSTRUCTURES STUDIED BY RAMAN-SCATTERING [J].

ZAHN, DRT ;

MACKEY, KJ ;

WILLIAMS, RH ;

MUNDER, H ;

GEURTS, J ;

RICHTER, W .

APPLIED PHYSICS LETTERS, 1987, 50 (12) :742-744

[19]

ZANIO K, 1978, SEMICONDUCT SEMIMET, V13, P139

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