PHOTOLUMINESCENCE AND P-TYPE CONDUCTIVITY IN CDTE-N GROWN BY MOLECULAR-BEAM EPITAXY

被引：40

作者：

DHESE, KA ^{[1
]}

DEVINE, P ^{[1
]}

ASHENFORD, DE ^{[1
]}

NICHOLLS, JE ^{[1
]}

SCOTT, CG ^{[1
]}

SANDS, D ^{[1
]}

LUNN, B ^{[1
]}

机构：

[1] UNIV HULL,DEPT ENGN DESIGN & MANUFACTURE,KINGSTON HULL HU6 7RX,N HUMBERSIDE,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 09期

关键词：

D O I：

10.1063/1.357197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An rf nitrogen (N) plasma source has been used to achieve p-type conductivity in molecular beam epitaxy CdTe layers grown with a Cd overpressure. Photoluminescence and secondary ion mass spectrometry measurements have confirmed the incorporation of the N species, and evidence for the resulting p-type conductivity has been obtained using capacitance-voltage and current-voltage techniques. Net hole concentrations as high as 2X10(17) cm(-3) have so far been achieved, which contrasts with the normally n-type nature of our undoped CdTe layers.

引用

页码：5423 / 5428

页数：6

共 19 条

[11] ACCEPTOR STATES IN CDTE AND COMPARISON WITH ZNTE - GENERAL TRENDS
MOLVA, E
PAUTRAT, JL
SAMINADAYAR, K
MILCHBERG, G
MAGNEA, N
[J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3344 - 3354
[12] ELECTRICAL AND OPTICAL-PROPERTIES OF AU IN CADMIUM TELLURIDE
MOLVA, E
FRANCOU, JM
PAUTRAT, JL
SAMINADAYAR, K
DANG, LS
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) : 2241 - 2249
[13] EXCITED-STATES OF AG AND CU ACCEPTORS IN CDTE
MOLVA, E
CHAMONAL, JP
MILCHBERG, G
SAMINADAYAR, K
PAJOT, B
NEU, G
[J]. SOLID STATE COMMUNICATIONS, 1982, 44 (03) : 351 - 355
[14] LOW-RESISTIVITY P-TYPE ZNSE-N GROWN BY MOLECULAR-BEAM EPITAXY USING A NITROGEN FREE-RADICAL SOURCE
PARK, RM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1992, 10 (04): : 701 - 704
[15] P-TYPE ZNSE BY NITROGEN ATOM BEAM DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH
PARK, RM
TROFFER, MB
ROULEAU, CM
DEPUYDT, JM
HAASE, MA
[J]. APPLIED PHYSICS LETTERS, 1990, 57 (20) : 2127 - 2129
[16] PROPERTIES OF CDTE-FILMS GROWN ON INSB BY MOLECULAR-BEAM EPITAXY
SUGIYAMA, K
[J]. THIN SOLID FILMS, 1984, 115 (02) : 97 - 107
[17] THE INFLUENCE OF CD OVERPRESSURE IN THE MOLECULAR-BEAM EPITAXY OF INSB/CDTE HETEROSTRUCTURES - A COMBINED RAMAN AND INFRARED-SPECTROSCOPY STUDY
ZAHN, DRT
RICHTER, W
EICKHOFF, T
GEURTS, J
GOLDING, TD
DINAN, JH
MACKEY, KJ
WILLIAMS, RH
[J]. APPLIED SURFACE SCIENCE, 1989, 41-2 : 497 - 503
[18] FORMATION OF INTERFACIAL LAYERS IN INSB-CDTE HETEROSTRUCTURES STUDIED BY RAMAN-SCATTERING
ZAHN, DRT
MACKEY, KJ
WILLIAMS, RH
MUNDER, H
GEURTS, J
RICHTER, W
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (12) : 742 - 744
[19] ZANIO K, 1978, SEMICONDUCT SEMIMET, V13, P139

← 1 2 →